Germanic alloy transistor


Transistor from 1965

The German alloy transistor is a low-alloyed doped germanium alloyed baseplate with a temperature of approximately 550 ° C on opposite sides of the metal balls. Fusion of metal changes semiconductor type to the opposite, creating emitter and collector areas. Types

The p-n-p transistor was formed by infiltration of gallium-induced beads into a semiconductor type n.

The n-p-n transistor was formed by the infiltration of lead beads with an antimony dopant into a p-type semiconductor wafer. Parameters

wiki

Comments

Popular posts from this blog

Association of Jewish handicrafts "Jad Charuzim"

Grouping Red Arrows

Catechism of Polish Child