Germanic alloy transistor
Transistor from 1965
The German alloy transistor is a low-alloyed doped germanium alloyed baseplate with a temperature of approximately 550 ° C on opposite sides of the metal balls. Fusion of metal changes semiconductor type to the opposite, creating emitter and collector areas. Types
The p-n-p transistor was formed by infiltration of gallium-induced beads into a semiconductor type n.
The n-p-n transistor was formed by the infiltration of lead beads with an antimony dopant into a p-type semiconductor wafer. Parameters
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